- Dell Dimension 8200 (400MHz FSB Only) 8100 PC800 RDRAM RIMM
- Capacity: Quantity 1 = 1GB Total, 2 X 512MB modules
- Brand: Samsung, The most popular brand in RDRAM.
- Specs: PC800, 184-pin RIMM 800-45 ECC Rambus RDRAM
- Model MR18R162GAF0-CK8 512MB/16 ECC
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61% buy the item featured on this page: Dell Dimension 8200 8100 PC800 RDRAM 1GB 2X512MB Rambus |
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Technical Details
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Product Description
Product Description
The RIMM module is a general purpose high-performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required.The RIMM module consists of 288Mb RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94ns per two bytes (7.5ns per 16 bytes).The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device.
The RIMM module is a general purpose high-performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required.The RIMM module consists of 288Mb RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94ns per two bytes (7.5ns per 16 bytes).The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device.